d1113 tkim tc-00003075 no. a2250-1/6 semiconductor components industries, llc, 2013 december, 2013 http://onsemi.com NDBA170N06A features ? on-resistance r ds (on)=2.5m ? (typ.) ? input capacitance ciss=15800pf(typ.) ? halogen free compliance specifications absolute maximum ratings at ta = 25 c parameter symbol value unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current (dc) i d 170 a drain current (dc) limited by package i dl 100 a drain current (pulse) pw 10 s, duty cycle 1% i dp 600 a power dissipation tc=25 c p d 90 w junction temperature tj 150 c storage temperature tstg - 55 to +150 c avalanche energy (single pulse) * 1 e as 571 mj avalanche current * 2 i av 70 a lead temperature for soldering purposes, 3mm from case for 10 seconds t l 260 c thermal resistance ratings parameter symbol value unit junction- to-case(drain) steady state r jc 1.39 c/w junction-to-ambient * 3 r ja 62.5 ordering & package information device package shipping NDBA170N06At4h pb-free and halogen free to-263 800 pcs. / reel note : * 1 v dd =36v, l=100 h, i av =70a (fig.1) * 2 l 100 h, single pulse * 3 surface mounted on fr4 board using recommended footprint n-channel power mosfet 60v, 170a, 3.3m ? , to-263 orderin g numbe r : ena2250 electrical connection n-channel stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. g(1) s(3) d (2, 4) tl marking packing type:tl 1 2 3 4 to-263 case 418aj 170n06 a lot no.
NDBA170N06A no.a2250-2/6 electrical characteristics at ta = 25 c parameter symbol conditions value unit min typ max drain to source breakdown voltage v( br ) dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0v 10 a gate to source leakage current i gss v gs =20v, v ds =0v 200 na gate threshold voltage v gs (th) v ds =10v, i d =1ma 1.2 2.6 v forward transconductance g fs v ds =10v, i d =50a 150 s static drain to source on-state resistance r ds (on) i d =50a, v gs =10v 2.5 3.3 m input capacitance ciss v ds =20v, f=1mhz 15800 pf output capacitance coss 1000 pf reverse transfer capacitance crss 740 pf turn-on delay time t d (on) see fig.2 115 ns rise time t r 550 ns turn-off delay time t d (off) 750 ns fall time t f 380 ns total gate charge qg v ds =36v, v gs =10v, i d =100a 280 nc gate to source charge qgs 56 nc gate to drain ?miller? charge qgd 60 nc forward diode voltage v sd i s =100a, v gs =0v 0.9 1.2 v reverse recovery time t rr see fig.3 100 ns reverse recovery charge q rr i s =100a, v gs =0v, di/dt=100a/ s 310 nc fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit
NDBA170N06A no.a2250-3/6
NDBA170N06A no.a2250-4/6
NDBA170N06A no.a2250-5/6 package dimensions d 2 pak-3 (to-263, 3-lead) case 418aj issue b scale 1:1 dim min max min max millimeters inches d e a 0.160 0.000 0.020 0.012 0.045 0.330 0.260 0.380 0.245 0.575 0.070 ----- ----- 0o 0.190 0.010 0.039 0.029 0.065 0.380 ----- 0.420 ----- 0.625 0.110 0.066 0.070 8o 4.06 0.00 0.51 0.30 1.14 8.38 6.60 9.65 6.22 14.60 1.78 ----- ----- 0o 4.83 0.25 0.99 0.74 1.65 9.65 ----- 10.67 ----- 15.88 2.79 1.68 1.78 8o b c2 e 0.100 bsc 2.54 bsc a1 c l h l2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. chamfer optional 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.005 per side. these dimensions are measured at the outermost extremes of the plastic body at datum h. 5. thermal pad contour is optional within dimensions e, l1, d1 and e1. 6. optional mold feature e1 l1 d1 l3 0.010 bsc 0.25 bsc m e d h l1 b e a1 b h l m detail c seating plane a 2x m a m 0.10 b c2 c a b seating plane detail c view a-a side view top view e2 l2 a a view a-a e1 d1 l1 optional constructions l3 gauge plane note 3 m a m 0.10 b xx xxxxxxxxx awlywwg generic marking diagrams* a = assembly location wl = wafer lot y=year ww = work week w = week code (ssg) m = month code (ssg) g=pb-freepackage aka = polarity indicator xxxxxxxxg ayww *this information is generic. please refer to device data sheet for actual part marking. pb ?free indicator, g or microdot , may or may not be present. ayww xxxxxxxxg aka *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. recommended 0.366 0.100 dimensions: inches pitch 2x 0.653 0.063 2x 0.436 0.169 soldering footprint* note 6 xxxxxx xxymw
NDBA170N06A ps no.a2250-6/6 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc mak es no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability ar ising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequentia l or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s techn ical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorize d for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other appli cation in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of persona l injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture o fthe part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. note on usage : since the NDBA170N06A is a mosfet product, please avoid using this de vice in the vicinity of highly charged objects.
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